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High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating

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High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating

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Model Number :	Tungsten Target
Price :	Negitionable
Payment Terms :	L/C, D/A, D/P, T/T
Supply Ability :	10000sets/month
Delivery Time :	30 days after receiving down payment

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High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating

High Purity 99.97% Tungsten Target For Sputtering Coating

Introduction

1. Tungsten sputtering target adopts best-demonstrated techniques including X-ray fluorescence (XRF), glow discharge mass spectrometry (GDMS), and inductively coupled plasma (ICP);
2. Tungsten target from Achemetal is provided with high purity up to 99.97%, density 18.8-19g/cm3, homogeneous organization structure, and fine grain;
3. Our tungsten sputtering target has been approved by the ASTM B 760-2007 and GB 3875-2006.

PARAMETER

OD(mm)	ID(mm)	Length(mm)	Custom Made
140-300	120-280	100-3300	Custom Made

Model Number	W1
Shape	customized
Chemical Composition	99.95% W

Feature

1. High density
2. High wear-resistant
3. High thermal conductivity with low thermal expansion coefficient

Specification

Atomic number	74
CAS number	7440-33-7
Atomic mass	183.84 [g/mol]
Melting point	3420 °C
Boiling point	5555 °C
Density at 20 °C	19.25 [g/cm3]
Crystal structure	Body-centered cubic
Coefficient of linear thermal expansion at 20 °C	4.410-6[m/(mK)]
Thermal conductivity at 20 °C	164 [W/(mK)]
Specific heat at 20 °C	0.13 [J/(gK)]
Electrical conductivity at 20 °C	18.2106[S/m]
Specific electrical resistance at 20 °C	0.055 [(mm2)/m]

APPLICATIONS

semiconductor

chemical vapor deposition (CVD)

physical vapor deposition (PVD) display

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